BSP89 NXP Semiconductors, BSP89 Datasheet - Page 2

• Manufacturer Part Number: BSP89
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 package, intended for use as
a surface-mounted device in line
current interrupters in telephone sets
and for application in relay, high
speed and line transformer drivers.
PINNING - SOT223
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
2001 May 18
V
V
I
I
P
T
T
D
DM
stg
j
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
SYMBOL
DS
GSO
tot
PIN
N-channel enhancement mode
vertical D-MOS transistor
1
2
3
4
6 cm
2
gate
drain
source
drain
.
Code: BSP89
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
DESCRIPTION
PARAMETER
QUICK REFERENCE DATA
V
V
I
R
D
SYMBOL
DS
GSth
DSon
handbook, halfpage
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
Fig.1 Simplified outline (SOT223) and symbol.
2
Top view
open drain
T
amb
1
PARAMETER
25 C; note 1
CONDITIONS
2
4
3
MAM109
g
d
s
MIN.
Product specification
55
240
2
375
5
MAX.
240
375
1.5
1.5
+150
150
MAX.
20
BSP89
V
V
mA
UNIT
V
V
mA
A
W
UNIT
C
C