BSP230 NXP Semiconductors, BSP230 Datasheet - Page 3

• Manufacturer Part Number: BSP230
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Device mounted on an epoxy printed-circuit board, 40
CHARACTERISTICS
T
1997 Oct 21
V
V
I
I
P
T
T
R
V
V
I
I
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
D
DM
j
DSS
GSS
on
off
SYMBOL
SYMBOL
SYMBOL
y
stg
j
DS
GSO
tot
(BR)DSS
GSth
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
P-channel enhancement mode
vertical D-MOS transistor
fs
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
V
V
I
V
I
D
D
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
GS
= 250 mA
= 250 mA
= V
= 10 V; I
= 25 V; I
= 0; V
= 0; V
= 0; V
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= 0; V
= 20 V; V
open drain
T
3
amb
GS
40
note 1
CONDITIONS
D
DS
DS
DS
DS
; I
= 10 A
CONDITIONS
D
CONDITIONS
1.5 mm; mounting pad for drain lead minimum 6 cm
= 25 V; f = 1 MHz
= 25 V; f = 1 MHz
= 25 V; f = 1 MHz
= 240 V
25 C; note 1
D
D
= 1 mA
DS
= 170 mA
= 170 mA
= 0
DD
DD
= 50 V;
= 50 V;
100
MIN.
65
300
1.95
MIN.
VALUE
83.3
60
15
5
5
15
TYP.
1.5
+150
150
Product specification
300
20
210
0.75
MAX.
17
90
30
15
10
30
MAX.
BSP230
2.8
100
100
UNIT
K/W
V
V
mA
A
W
C
C
UNIT
V
V
nA
nA
mS
pF
pF
pF
ns
ns
UNIT
2
.