BSH105 NXP Semiconductors, BSH105 Datasheet - Page 4

• Manufacturer Part Number: BSH105
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
N-channel enhancement mode
MOS transistor
Fig.9. Normalised drain-source on-state resistance.
2.5
1.5
0.5
3.5
2.5
1.5
0.5
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
3
2
1
0
4
3
2
1
0
1
Fig.8. Typical transconductance, T
0
0
0
Normalised Drain-Source On Resistance
Drain Current, ID (A)
Transconductance, gfs (S)
VDS > ID X RDS(on)
RDS(ON) @ 25C
Fig.7. Typical transfer characteristics.
RDS(ON) @ Tj
0.5
0.5
25
R
DS(ON)
Gate-Source Voltage, VGS (V)
Junction Temperature, Tj (C)
150 C
50
1
1
Drain Current, ID (A)
/R
I
D
g
fs
= f(V
DS(ON)25 ˚C
= f(I
Tj = 25 C
1.5
1.5
75
VGS = 4.5 V
GS
D
)
)
= f(T
100
2
2
j
)
2.5 V
j
= 25 ˚C .
125
2.5
2.5
BSH105
BSH105
1.8 V
150
3
3
4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E+00
1000
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
100
1
0
V
10
Fig.12. Typical capacitances, C
C = f(V
0
GS(TO)
Threshold Voltage, VGS(to), (V)
0.1
Capacitances, Ciss, Coss, Crss (pF)
0
Fig.11. Sub-threshold drain current.
Drain Current, ID (A)
VDS = 5 V
Tj = 25 C
Fig.10. Gate threshold voltage.
I
= f(T
D
25
DS
= f(V
); conditions: V
j
0.2
); conditions: I
Junction Temperature, Tj (C)
Drain-Source Voltage, VDS (V)
GS)
Gate-Source Voltage, VGS (V)
50
; conditions: T
1
0.4
minimum
75
typical
GS
D
= 1 mA; V
= 0 V; f = 1 MHz
0.6
100
Product specification
j
10
= 25 ˚C
iss
, C
Crss
0.8
Coss
Ciss
125
DS
oss
BSH105
BSH105
BSH105
, C
= V
Rev 1.000
rss
GS
150
100
.
1