2N7002E NXP Semiconductors, 2N7002E Datasheet - Page 8

• Manufacturer Part Number: 2N7002E
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2N7002E_3
Product data sheet
Fig 13. Source current as a function of source-drain
(A)
I
S
0.8
0.6
0.4
0.2
1
0
T
voltage; typical values
0.2
j
= 25 C and 150 C; V
0.4
150 C
0.6
GS
= 0 V
0.8
T
j
= 25 C
V
SD
03ai17
(V)
1
Rev. 03 — 28 April 2006
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
2
1
10
V
as a function of drain-source voltage; typical
values
GS
-1
= 0 V; f = 1 MHz
1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
N-channel TrenchMOS FET
10
2N7002E
V
DS
C
C
C
(V)
03ai18
iss
oss
rss
10
2
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