2N7002 NXP Semiconductors, 2N7002 Datasheet - Page 6

• Manufacturer Part Number: 2N7002
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2N7002
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
D
D
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
0
1
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
1
2
T
j
= 150 °C
2
10
4
25 °C
V
3
GS
V
All information provided in this document is subject to legal disclaimers.
GS
V
003aab352
003aab354
(V) =
DS
(V)
(V)
4.5
3.5
Rev. 7 — 8 September 2011
5
4
4
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
10000
8000
6000
4000
2000
a
2.4
1.8
1.2
0.6
0
−60
0
of drain current; typical values
factor as a function of junction temperature
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
0
60 V, 300 mA N-channel Trench MOSFET
0.2
0
V
GS
(V) =
0.4
4
60
0.6
120
4.5
© NXP B.V. 2011. All rights reserved.
0.8
003aab353
T
2N7002
j
I
(°C)
D
03aa28
(A)
10
5
180
1
6 of 13