BUK9Y30-75B NXP Semiconductors, BUK9Y30-75B Datasheet - Page 8

• Manufacturer Part Number: BUK9Y30-75B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
60
50
40
30
20
10
5
4
3
2
1
0
T
T
of drain current; typical values
charge; typical values
0
0
j
j
= 25 °C
= 25 °C; I
V
GS
20
D
5
(V) = 3.4
= 25 A
V
V
DS
DS
= 14 V
= 60 V
40
10
3.6
3.8 4.0 5.0 10
60
15
Q
I
G
D
(A)
(nC)
03no12
03no07
80
20
Rev. 04 — 10 April 2008
Fig 13. Normalized drain-source on-state resistance
Fig 15. Input, output and reverse transfer capacitances
(pF)
2500
2000
1500
1000
C
500
a
0
10
3
2
1
0
V
a =
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-60
GS
−1
R
= 0V ; f = 1 M H z
DSon ( 25°C )
R
-20
N-channel TrenchMOS logic level FET
DSon
C
C
C
oss
rss
iss
20
1
BUK9Y30-75B
60
100
10
V
© NXP B.V. 2008. All rights reserved.
DS
140
(V)
03nq03
T
03no13
j
(°C)
180
10
2
8 of 13