BUK9E08-55B NXP Semiconductors, BUK9E08-55B Datasheet - Page 5

• Manufacturer Part Number: BUK9E08-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9E08-55B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to ambient as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
single shot
0.05
0.02
0.2
0.1
10
−5
Conditions
see
vertical in still air
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Figure 4
10
−4
Rev. 03 — 31 May 2010
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
10
t
−1
p
T
t
BUK9E08-55B
p
Min
-
-
(s)
δ =
03nn56
t
T
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.74
-
Unit
K/W
K/W
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