BUK9E06-55B NXP Semiconductors, BUK9E06-55B Datasheet - Page 11

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9E06-55B

Manufacturer Part Number
BUK9E06-55B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Revision history
Table 7.
BUK9E06-55B_4
Product data sheet
Document ID
BUK9E06-55B_4
Modifications:
BUK9E06-55B_1
Modifications:
BUK95_96_9E06_55B_3
(9397 750 13519)
BUK95_96_9E06_55B-02
(9397 750 10474)
BUK95_96_9E06_55B-01
(9397 750 09946)
Revision history
Release date
20090722
20090715
20041130
20021010
20020813
Various changes to content.
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9E06-55B separated from data sheet BUK95_96_9E06_55B_3.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 04 — 22 July 2009
Change notice
-
-
-
-
-
BUK9E06-55B
N-channel TrenchMOS FET
Supersedes
BUK9E06-55B_1
BUK95_96_9E06_55B_3
BUK95_96_9E06_55B-02
BUK95_96_9E06_55B-01
-
© NXP B.V. 2009. All rights reserved.
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