BUK9606-55B NXP Semiconductors, BUK9606-55B Datasheet - Page 7

• Manufacturer Part Number: BUK9606-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK9606-55B_4
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(S)
g
I
D
fs
200
150
100
350
300
250
200
150
100
50
50
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
10
6
5
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
20
4.2
4
4
…continued
40
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
6
Conditions
I
see
I
V
S
S
DS
60
= 25 A; V
= 20 A; dI
V
Figure 13
= 30 V; T
8
GS
I
V
D
(V) is
03nj62
DS
(A)
03nj65
(V)
GS
80
S
10
Rev. 04 — 23 July 2009
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
R
(mΩ)
GS
100
(A)
DSon
I
D
75
50
25
14
12
10
0
8
6
4
2
= 0 V;
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
100
3
1
3.2
T
j
Min
-
-
-
= 175 ° C
3.4
BUK9606-55B
200
N-channel TrenchMOS FET
Typ
0.85
64
79
2
300
© NXP B.V. 2009. All rights reserved.
V
4
V
T
GS
5
GS
10
j
I
= 25 ° C
D
Max
1.2
-
-
(V)
(V) is
(A)
03nj63
03nj66
400
3
Unit
V
ns
nC
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