BUK9215-55A NXP Semiconductors, BUK9215-55A Datasheet - Page 2

• Manufacturer Part Number: BUK9215-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9215-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9215-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
DPAK
Symbol
Avalanches ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Current is limited by power dissipation chip rating.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
Simplified outline
…continued
Conditions
I
R
T
V
V
see
SOT428 (DPAK)
D
j(init)
GS
DS
GS
= 62 A; V
Figure 9
= 44 V; T
= 5 V; I
= 50 Ω; V
1
= 25 °C; unclamped
mb
2
D
3
sup
N-channel TrenchMOS logic level FET
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 5 V;
BUK9215-55A
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
20
Version
SOT428
D
S
Max Unit
211
-
2 of 14
mJ
nC