BUK7Y12-55B NXP Semiconductors, BUK7Y12-55B Datasheet - Page 8

• Manufacturer Part Number: BUK7Y12-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7Y12-55B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
GS(th)
(mΩ)
(V)
DSON
35
28
21
14
5
4
3
2
1
0
7
0
−60
junction temperature
of gate-source voltage; typical values.
4
0
8
60
12
max
min
typ
120
16
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003aad618
V
T
GS
j
(°C)
03aa32
(V)
180
20
Rev. 03 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
-60
gate-source voltage
factor as a function of junction temperature.
0
N-channel TrenchMOS standard level FET
0
2
min
BUK7Y12-55B
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
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