BUK7909-75ATE NXP Semiconductors, BUK7909-75ATE Datasheet - Page 12

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7909-75ATE

Manufacturer Part Number
BUK7909-75ATE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7909-75ATE
Manufacturer:
NXP
Quantity:
30 000
Part Number:
BUK7909-75ATE
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT263B (TO-220)
BUK7909-75ATE_2
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
DIMENSIONS (mm are the original dimensions)
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
UNIT
mm
OUTLINE
VERSION
SOT263B
4.5
4.1
A
1.39
1.27
A 1
0.85
0.70
b
IEC
D
L
0.7
0.4
c
D 1
15.8
15.2
D
e
m
1
5-lead TO-220
D 1
6.4
5.9
JEDEC
∅ p
p 1
E
10.3
REFERENCES
9.7
Rev. 02 — 16 February 2009
b
E
0
1.7
5
e
L 2
q
scale
w
15.0
13.5
EIAJ
L 1
L
5
M
L 1
2.4
1.6
10 mm
(1)
L 2
0.5
mounting
N-channel TrenchPLUS standard level FET
(2)
base
0.8
0.6
m
Q
∅ p
3.8
3.6
BUK7909-75ATE
A
A 1
PROJECTION
c
EUROPEAN
4.3
4.1
p 1
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
01-01-11
0.4
w
SOT263B
12 of 15

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