BUK7675-55A NXP Semiconductors, BUK7675-55A Datasheet - Page 2

• Manufacturer Part Number: BUK7675-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7675-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7675-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
Rev. 02 — 3 February 2011
GS
GS
≥ 25 °C; T
= 11 A; V
= 25 °C; V
Figure 3
= 100 °C; V
= 25 °C; pulsed; t
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
p
≤ 10 µs; T
Simplified outline
sup
j
≤ 175 °C
j(init)
GS
≤ 55 V; R
GS
SOT404 (D2PAK)
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
p
1
= 25 °C
≤ 10 µs;
GS
mb
2
N-channel TrenchMOS standard level FET
= 50 Ω;
3
Figure
Figure 1
1;
Graphic symbol
BUK7675-55A
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
S
175
175
Version
SOT404
Max
55
55
20
20.3
14.3
81
62
20.3
81
30.3
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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