BUK764R0-55B NXP Semiconductors, BUK764R0-55B Datasheet - Page 5

• Manufacturer Part Number: BUK764R0-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK764R0-55B
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
-1
-2
-3
3
2
1
1
10
10
(1) Capped at 75 A due to package.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.05
0.2
0.1
0.02
Thermal characteristics
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Limit R
10
-5
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
1
-4
(1)
Rev. 5 — 22 April 2011
Conditions
see
mounted on a printed-circuit
board; minimum footprint
Figure 5
10
-3
DC
N-channel TrenchMOS standard level FET
10
10
-2
BUK764R0-55B
Min
-
-
10
P
V
-1
DS
t
(V)
p
Typ
-
50
T
t
p
(s)
© NXP B.V. 2011. All rights reserved.
t
p
δ =
100 μ s
1 ms
10 ms
100 ms
= 10 μ s
03ng55
03ng56
Max
0.5
-
T
t
p
t
10
1
2
Unit
K/W
K/W
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