BUK7626-100B NXP Semiconductors, BUK7626-100B Datasheet
BUK7626-100B
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BUK7626-100B Summary of contents
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... BUK7626-100B N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET Min ≤ 100 V; - sup = °C; ...
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... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET Min - - -20 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° ...
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... Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET 03nm43 = 10 μ 100 μ 100 ...
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... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B Min Typ Max Unit 100 - - ...
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... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET 50 DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... Label 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...
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... °C = 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nm35 1.5 ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7626-100B separated from data sheet BUK75_7626_100B-01. BUK75_7626_100B-01 20030411 (9397 750 11238) BUK7626-100B ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7626-100B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 February 2011 Document identifier: BUK7626-100B ...