BUK7610-55AL NXP Semiconductors, BUK7610-55AL Datasheet - Page 3

• Manufacturer Part Number: BUK7610-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
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BUK7610-55AL_2
Product data sheet
Fig 1. Continuous drain current as a function of
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Continuous current is limited by package.
Single shot avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
150
100
(A)
I
50
D
0
mounting base temperature
V
(1) Capped at 75 A due to package.
(1) Single shot.
(2) Single shot.
(3) Repetitive.
0
GS
10 V
(1)
50
100
10
10
(A)
I
10
AV
-1
150
2
1
10
-2
T
003aaa726
mb
( ° C)
200
Rev. 02 — 9 January 2008
10
-1
(1)
(2)
(3)
Fig 2. Normalized total power dissipation as a
1
P
(%)
120
der
80
40
0
P
function of mounting base temperature
t
0
AV
der
T
N-channel TrenchMOS standard level FET
003aaa739
(ms)
j
= 25 ˚C
150 ˚C
=
P
tot ( 25°C )
P
10
50
tot
× 100 %
BUK7610-55AL
100
150
© NXP B.V. 2008. All rights reserved.
T
03aa16
mb
( ° C)
200
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