BUK7535-100A NXP Semiconductors, BUK7535-100A Datasheet - Page 6

• Manufacturer Part Number: BUK7535-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK7535-100A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
T
V
R
V
R
V
R
from contact screw on mounting base
to centre of die ; T
from drain lead 6 mm from package to
centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
Rev. 02 — 21 February 2011
D
D
D
D
D
S
S
DS
DS
GS
GS
GS
GS
GS
j
DS
DS
DS
j
GS
G(ext)
G(ext)
G(ext)
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure 15
= 100 V; V
= 100 V; V
= 30 V; R
= 30 V; V
= 30 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
= 10 Ω
= 10 Ω
12; see
12; see
GS
S
DS
DS
DS
DS
D
D
/dt = -100 A/µs;
GS
DS
L
L
DS
DS
= 25 A; T
= 25 A; T
= 0 V; T
GS
GS
= V
= V
= V
Figure 14
= 1.2 Ω; V
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
j
j
= 25 °C
= 0 V; T
= 10 V;
= 25 °C
= 0 V; T
= 30 V; T
= 0 V; T
= 0 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C
Figure 13
Figure 13
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
j
= 25 °C;
= -55 °C;
= 175 °C;
= 175 °C;
= 25 °C;
j
GS
GS
= 25 °C
N-channel TrenchMOS standard level FET
j
j
= 25 °C
j
j
j
= 25 °C
= 175 °C
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 10 V;
BUK7535-100A
Min
100
89
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
2
-
21
1900
250
150
15
67
56
35
3.5
4.5
7.5
0.85
67
220
© NXP B.V. 2011. All rights reserved.
301
205
Max
-
-
4
4.4
-
10
500
100
100
88
35
2535
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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