BUK752R7-30B NXP Semiconductors, BUK752R7-30B Datasheet - Page 9

• Manufacturer Part Number: BUK752R7-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK752R7-30B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
25
V
DD
= 14 V
50
(A)
I
S
100
75
50
25
V
0
75
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 24 V
G
(nC)
03nh10
0.2
100
Rev. 04 — 7 June 2010
T
T
j
j
= 175 °C
= 25 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
0.6
10000
(pF)
7500
5000
2500
C
0
10
as a function of drain-source voltage; typical
values
0.8
−1
N-channel TrenchMOS standard level FET
V
SD
03nh09
(V)
1.0
1
BUK752R7-30B
10
V
© NXP B.V. 2010. All rights reserved.
DS
(V)
C
C
C
03nh16
iss
oss
rss
10
2
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