BUK7237-55A NXP Semiconductors, BUK7237-55A Datasheet - Page 7

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7237-55A

Manufacturer Part Number
BUK7237-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BUK7237-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
50
40
30
20
10
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
T
2
j
= 175 °C
0
4
60
max
min
typ
T
j
6
= 25 °C
120
All information provided in this document is subject to legal disclaimers.
8
T
V
j
GS
(°C)
03nb79
03aa32
(V)
180
10
Rev. 02 — 9 July 2010
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
10
80
70
60
50
40
30
20
8
6
4
2
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
V
5.5
DD
= 14 V
20
6 6.5 7
10
40
BUK7237-55A
8
V
60
GS
20
(V) = 10
V
9
DD
© NXP B.V. 2010. All rights reserved.
Q
80
G
= 44 V
(nC)
I
D
03nb77
03nb82
(A)
100
30
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