BUK7227-100B NXP Semiconductors, BUK7227-100B Datasheet - Page 4
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415037/sot428_3d_sml.gif)
BUK7227-100B
Manufacturer Part Number
BUK7227-100B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7227-100B.pdf
(14 pages)
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NXP Semiconductors
BUK7227-100B
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
Limit R
DSon
= V
DS
/ I
All information provided in this document is subject to legal disclaimers.
D
DC
Rev. 02 — 17 February 2011
10
10
N-channel TrenchMOS standard level FET
2
t
100 μ s
1 ms
10 ms
100 ms
p
= 10 μ s
V
DS
(V)
BUK7227-100B
03nl31
10
3
© NXP B.V. 2011. All rights reserved.
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