BUK7225-55A NXP Semiconductors, BUK7225-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7225-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7225-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
4
60
T
max
j
min
typ
= 25 °C
6
120
T
j
All information provided in this document is subject to legal disclaimers.
8
= 175 °C
T
V
j
GS
(°C)
03nb69
03aa32
(V)
Rev. 2 — 23 February 2011
180
10
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
10
60
50
40
30
20
10
8
6
4
2
0
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
20
5.5
V
10
6
DD
40
= 14 V
6.5
60
7
BUK7225-55A
20
80
8
100
V
V
30
DD
GS
© NXP B.V. 2011. All rights reserved.
Q
= 44 V
(V) = 10
120
G
(nC)
03nb67
03nb72
I
D
(A)
140
40
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