BUK7107-55AIE NXP Semiconductors, BUK7107-55AIE Datasheet - Page 7

• Manufacturer Part Number: BUK7107-55AIE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK7107-55AIE_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
SD
r
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
I
see
I
V
S
S
DS
= 25 A; V
= 20 A; dI
Figure 16
= 30 V; T
Rev. 02 — 10 February 2009
GS
S
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C;
GS
= -10 V;
N-channel TrenchPLUS standard level FET
BUK7107-55AIE
Min
-
-
-
Typ
0.85
80
200
© NXP B.V. 2009. All rights reserved.
Max
1.2
-
-
Unit
V
ns
nC
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