BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet - Page 9

• Manufacturer Part Number: BUK6C2R1-55C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT427 (D2PAK)
BUK6C2R1-55C
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT427
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
1
0.64
0.46
c
e
e
max.
11
D
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
4
1.60
1.20
e
D 1
REFERENCES
e
Rev. 3 — 18 January 2012
10.30
9.70
E
e
0
7
1.27
e
b
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
N-channel TrenchMOS intermediate level FET
H D
mounting
2.60
2.20
Q
base
L p
A 1
BUK6C2R1-55C
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2012. All rights reserved.
ISSUE DATE
05-03-09
06-03-16
SOT427
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