BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet - Page 2

• Manufacturer Part Number: BUK626R2-40C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK626R2-40C
Product data sheet
Pin
1
2
3
mb
Type number
BUK626R2-40C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
DPAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
…continued
Simplified outline
I
Conditions
I
R
T
V
see
D
D
j(init)
GS
GS
= 90 A; V
= 25 A; V
Figure 14
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
SOT428 (DPAK)
N-channel TrenchMOS intermediate level FET
1
sup
DS
mb
GS
2
= 32 V;
≤ 40 V;
Figure
= 10 V;
3
13;
BUK626R2-40C
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
20
Version
SOT428
D
S
Max Unit
113
-
2 of 14
mJ
nC