PTVSXP1UTP_SER NXP Semiconductors, PTVSXP1UTP_SER Datasheet - Page 5

• Manufacturer Part Number: PTVSXP1UTP_SER
• Description: 600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package, designed for transient overvoltageprotection in high-temperature applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 10.
T
PTVSXP1UTP_SER
Product data sheet
Type
number
PTVSxxx
P1UTP
40V
43V
45V
48V
51V
54V
58V
60V
64V
j
= 25

C unless otherwise specified.
Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP
Reverse
standoff
voltage
V
Max
40
43
45
48
51
54
58
60
64
RWM
(V)
Breakdown voltage
V
I
Min
44.40
47.80
50.00
53.30
56.70
60.00
64.40
66.70
71.10
R
BR
= 1 mA
(V)
Typ
46.80
50.30
52.65
56.10
59.70
63.15
67.80
70.20
74.85
All information provided in this document is subject to legal disclaimers.
Max
49.10
52.80
55.30
58.90
62.70
66.30
71.20
73.70
78.60
Rev. 1 — 11 October 2011
Reverse leakage current
I
at V
Typ
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
RM
(A)
RWM
High-temperature 600 W Transient Voltage Suppressor
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Max
0.1
at V
T
Typ
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
j
PTVSxP1UTP series
= 150 C
…continued
RWM
Clamping
voltage V
Max
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
CL
I
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
PPM
(V)
(A) Typ
© NXP B.V. 2011. All rights reserved.
48.1
51.6
55.2
58.2
62.5
66.1
71.4
74.1
Temperature
coefficient
S
I
80.0
Z
Z
= 5 mA
(mV/K)
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