BAV199W NXP Semiconductors, BAV199W Datasheet - Page 2

• Manufacturer Part Number: BAV199W
• Description: Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Small plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 μs
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATIONS
• Low-leakage current applications in
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small plastic
SOT323 (SC-70) SMD package.
The diodes are connected in series.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 May 11
Per diode unless otherwise specified
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
max. 75 V
max. 85 V
max. 500 mA.
surface mounted circuits.
stg
j
RRM
R
tot
Low-leakage double diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
PINNING
Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.
PIN
1
2
3
single diode loaded; T
double diode loaded; T
square wave; T
see Fig.4
single diode loaded; T
double diode loaded; T
handbook, halfpage
t
t
t
p
p
p
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
= 1 μs
= 1 ms
= 1 s
anode
cathode
cathode; anode
2
Top view
1
CONDITIONS
j
= 25 °C prior to surge;
3
s
s
2
s
s
= 90 °C; see Fig.2
= 90 °C
= 90 °C; see Fig.2 −
= 90 °C
DESCRIPTION
1
MAM391
3
−
−
−
−
−
−
−
−
−
−65
−
MIN.
Product data sheet
2
BAV199W
85
75
135
110
500
4
1
0.5
150
240
+150
150
MAX.
V
V
mA
mA
mA
A
A
A
mW
mW
°C
°C
UNIT