BAV199 NXP Semiconductors, BAV199 Datasheet - Page 3

• Manufacturer Part Number: BAV199
• Description: Epitaxial, medium-speed switching,double diode in a small SOT23 plasticSMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
Per diode
V
I
C
t
R
R
j
R
rr
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
F
Low-leakage double diode
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
measured at I
R
I
I
I
I
V
V
= 10 mA; R
F
F
F
F
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 75 V; T
R
3
CONDITIONS
R
L
= 0; see Fig.6
j
= 100 Ω;
= 1 mA; see Fig.7
= 150 °C
note 1
F
CONDITIONS
= 10 mA to
−
−
−
−
0.003
3
2
0.8
TYP.
VALUE
360
500
900
1 000
1 100
1 250
5
80
−
3
Product data sheet
MAX.
BAV199
UNIT
K/W
K/W
mV
mV
mV
mV
nA
nA
pF
µs
UNIT