BAV102_BAV103 NXP Semiconductors, BAV102_BAV103 Datasheet - Page 4

Single general-purpose switching diodes, fabricated in planar technology, andencapsulated in small hermetically sealed glass SOD80C Surface-MountedDevice (SMD) packages

BAV102_BAV103

Manufacturer Part Number
BAV102_BAV103
Description
Single general-purpose switching diodes, fabricated in planar technology, andencapsulated in small hermetically sealed glass SOD80C Surface-MountedDevice (SMD) packages
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BAV102_BAV103
Product data sheet
Fig 1.
Fig 3.
(μA)
I
(mA)
R
(1) T
(2) T
(3) T
10
10
600
I
400
200
10
10
F
10
−1
−2
0
1
3
2
0
Forward current as a function of forward
voltage
0
V
Solid line: maximum values
Dotted line: typical values
Reverse current as a function of junction
temperature
amb
amb
amb
R
= V
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
Rmax
(1)
100
1
(2)
T
V
j
F
(°C)
(3)
(V)
All information provided in this document is subject to legal disclaimers.
mbg459
mgd009
200
2
Rev. 4 — 6 August 2010
Fig 2.
Fig 4.
I
(pF)
FSM
(A)
C
10
10
d
1.6
1.4
1.2
1.0
0.8
10
−1
1
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
Single general-purpose switching diodes
10
amb
BAV102; BAV103
= 25 °C
10
10
2
V
10
R
© NXP B.V. 2010. All rights reserved.
3
(V)
t
p
(μs)
mbg703
mgd005
10
20
4
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