BAS101_BAS101S NXP Semiconductors, BAS101_BAS101S Datasheet - Page 6

High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package

BAS101_BAS101S

Manufacturer Part Number
BAS101_BAS101S
Description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Test information
9. Package outline
10. Packing information
BAS101_BAS101S_2
Product data sheet
Fig 5.
(1) I
V = V
R
S
Reverse recovery time test circuit and waveforms
R
R
= 50
+ I
= 3 mA
F
Ω
×
R
S
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
BAS101
BAS101S
Fig 6.
For further information and the availability of packing methods, see
I
F
D.U.T.
Package outline SOT23 (TO-236AB)
Packing methods
SOT23
OSCILLOSCOPE
mga881
SAMPLING
R
i
2.5
2.1
= 50
Rev. 02 — 14 December 2009
Dimensions in mm
1.4
1.2
Ω
Description
4 mm pitch, 8 mm tape and reel
1
V
R
t
10 %
r
1.9
3.0
2.8
90 %
input signal
3
t
p
BAS101; BAS101S
2
0.48
0.38
0.45
0.15
High-voltage switching diodes
Section
t
1.1
0.9
0.15
0.09
[1]
+ I
04-11-04
Packing quantity
3000
-215
15.
F
output signal
© NXP B.V. 2009. All rights reserved.
t rr
10000
-235
(1)
t
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