1PS302 NXP Semiconductors, 1PS302 Datasheet - Page 4

Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package

1PS302

Manufacturer Part Number
1PS302
Description
Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1PS302
Product data sheet
Fig 1.
Fig 3.
(mA)
(pF)
C
I
(1) T
(2) T
(3) T
F
300
200
100
d
0.8
0.6
0.4
0.2
0.0
0
0.0
Forward current as a function of forward
voltage
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
j
j
= 150 C; typical values
= 25 C; typical values
= 25 C; maximum values
0.5
4
amb
= 25 C
(1)
1.0
8
(2)
(3)
1.5
12
All information provided in this document is subject to legal disclaimers.
006aac851
V
006aac852
V
R
F
(V)
(V)
Rev. 5 — 16 November 2011
2.0
16
Fig 2.
Fig 4.
(mA)
(1) V
(2) V
(3) V
(1) single diode loaded
(2) double diode loaded
(μA)
10
10
I
300
200
100
I
10
F
R
10
−1
−2
0
1
2
0
Reverse current as a function of junction
temperature
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curves
R
R
R
= 80 V; maximum values
= 80 V; typical values
= 25 V; typical values
(2)
(1)
(1)
Dual high-speed switching diode
(2)
100
100
(3)
T
T
amb
j
(°C)
© NXP B.V. 2011. All rights reserved.
(°C)
1PS302
mbg380
mbg443
200
200
4 of 11

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