PMEG6002EB_PMEG6002TV NXP Semiconductors, PMEG6002EB_PMEG6002TV Datasheet - Page 4

• Manufacturer Part Number: PMEG6002EB_PMEG6002TV
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with anintegrated guard ring for stress protection, encapsulated in ultra small and flat leadSurface-Mounted Device (SMD) plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMEG6002EB_PMEG6002TV_1
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
Table 8.
T
[1]
Symbol
Per device
R
R
Symbol Parameter
Per diode
V
I
C
R
amb
F
th(j-a)
th(j-sp)
d
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
Pulse test: t
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
PMEG6002EB
PMEG6002TV
PMEG6002EB
PMEG6002TV
p
R
300 s;
are a significant part of the total power losses.
Rev. 01 — 24 November 2006
0.02.
PMEG6002EB; PMEG6002TV
Conditions
I
I
I
I
I
V
V
V
V
F
F
F
F
F
R
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
= 10 V
= 60 V
= 10 V; T
= 1 V; f = 1 MHz
0.2 A very low V
Conditions
in free air
amb
= 100 C
F
MEGA Schottky barrier rectifiers
[1]
[1][2]
[1][2]
[1][3]
Min
-
-
-
-
-
-
-
-
-
[4]
Min
-
-
-
-
-
Typ
130
190
260
420
540
2
20
310
14
Typ
-
-
-
-
-
© NXP B.V. 2006. All rights reserved.
Max
170
230
300
470
600
10
100
-
20
Max
400
416
318
75
195
2
.
Unit
mV
mV
mV
mV
mV
pF
Unit
K/W
K/W
K/W
K/W
K/W
A
A
A
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