PMEG4002EB NXP Semiconductors, PMEG4002EB Datasheet - Page 3

• Manufacturer Part Number: PMEG4002EB
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra smalland flat lead Surface Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMEG4002EB_2
Product data sheet
Table 6.
[1]
[2]
Table 7.
T
[1]
Symbol
R
Symbol
V
I
C
R
amb
F
th(j-a)
d
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode
capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
≤ 300 μs; δ ≤ 0.02.
0.2 A very low V
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
Rev. 02 — 13 January 2010
rating will be available on request.
I
Conditions
I
I
I
I
V
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
= 25 V
= 1 V; f = 1 MHz
F
MEGA Schottky barrier rectifier in SOD523 package
Conditions
in free air
[1]
-
-
Min
-
-
-
-
-
[1][2]
PMEG4002EB
Min
-
Typ
190
250
320
440
520
-
-
Typ
-
© NXP B.V. 2010. All rights reserved.
Max
220
290
360
500
600
0.5
20
Max
450
Unit
mV
mV
mV
mV
mV
μA
pF
Unit
K/W
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