PMEG3010EP NXP Semiconductors, PMEG3010EP Datasheet
PMEG3010EP
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PMEG3010EP Summary of contents
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... PMEG3010EP 1 A low V Rev. 01 — 30 December 2008 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. ...
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... T average forward current square wave kHz T T non-repetitive peak square wave; forward current t total power dissipation T Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifier F Simplified outline Graphic symbol [ Marking code A1 Min = 0.5 ...
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... standard footprint Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifier F Min Max - 150 55 +150 65 +150 ...
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... FR4 PCB, mounting pad for cathode 1 cm Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3010EP_1 Product data sheet 1 A low Rev. 01 — 30 December 2008 PMEG3010EP MEGA Schottky barrier rectifier F 006aab296 (s) p 006aab297 2 10 ...
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... reverse current diode capacitance MHz Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifier F 006aab298 (s) p Min Typ Max - 230 260 - 280 310 - 320 ...
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... V (V) F (1) T (2) T (3) T (4) T Fig 5. 300 C d (pF) 200 100 Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifi ( 125 Reverse current as a function of reverse voltage ...
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... Fig 8. 006aab304 1.6 I F(AV) (A) 1.2 0.8 0.4 125 150 175 amb (1) (2) (3) (4) Fig 10. Average forward current as a function of Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifi (1) 2 ( 125 0.9 = 0.8 = 0.5 Average reverse power dissipation as a function of reverse voltage ...
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... Product data sheet 006aab306 1.6 I F(AV) (A) 1.2 0.8 0.4 0 125 150 175 amb (1) (2) (3) (4) Fig 12. Average forward current as a function of Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifier F 006aab307 (1) (2) (3) ( 100 125 150 150 0.5 ...
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... Fig 14. Package outline SOD128 PMEG3010EP_1 Product data sheet DC, and RMS M 5.0 4.0 4.4 3.6 Dimensions in mm Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifi duty cycle = 006aaa812 Figure 9, 10, with I defined as peak current ...
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... Packing methods Package Description SOD128 4 mm pitch tape and reel 6.2 4.4 4.2 2 Reflow soldering is the only recommended soldering method. Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifier F [1] Packing quantity 3000 -115 Section 14. solder lands solder resist 1.9 2 ...
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... Revision history Table 9. Revision history Document ID Release date PMEG3010EP_1 20081230 PMEG3010EP_1 Product data sheet 1 A low V Data sheet status Change notice Product data sheet - Rev. 01 — 30 December 2008 PMEG3010EP MEGA Schottky barrier rectifier F Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 30 December 2008 PMEG3010EP 1 A low V MEGA Schottky barrier rectifier F © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 December 2008 Document identifier: PMEG3010EP_1 ...