PMEG3002AEB NXP Semiconductors, PMEG3002AEB Datasheet - Page 4

• Manufacturer Part Number: PMEG3002AEB
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier diode with an integrated guard ring forstress protection, encapsulated in a SOD523 (SC-79) ultrasmall SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
GRAPHICAL DATA
2002 May 06
handbook, halfpage
handbook, halfpage
Low V
(1) T
(2) T
(3) T
Fig.2
(pF)
f = 1 MHz; T
Fig.4
C d
(mA)
I F
10
10
10
40
35
30
25
20
15
10
10
amb
amb
amb
5
0
1
4
3
2
0
0
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
F
(1)
amb
MEGA Schottky barrier diode
= 25 °C.
0.2
(2) (3)
10
0.4
0.6
20
0.8
V R (V)
V F (V)
MHC189
MHC187
30
1
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(μA)
I R
10
10
10
10
amb
amb
amb
1
4
3
2
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
(1)
(2)
(3)
10
PMEG3002AEB
20
Product data sheet
V R (V)
MHC188
30