PMEG2005EPK NXP Semiconductors, PMEG2005EPK Datasheet - Page 5

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab

PMEG2005EPK

Manufacturer Part Number
PMEG2005EPK
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Characteristics
Table 7.
PMEG2005EPK
Product data sheet
Symbol
V
I
C
R
Fig 4.
F
d
Z
(K/W)
th(j-a)
10
10
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
-3
Characteristics
0.75
0.33
duty cycle =
0.05
0.2
0
Parameter
forward voltage
reverse current
diode capacitance
0.25
0.02
0.01
0.5
0.1
1
10
2
O
-2
3
, standard footprint
Conditions
I
δ ≤ 0.02; T
I
δ ≤ 0.02; T
V
V
V
V
All information provided in this document is subject to legal disclaimers.
F
F
10
R
R
R
R
= 100 mA; pulsed; t
= 500 mA; pulsed; t
= 10 V; T
= 20 V; T
= 1 V; f = 1 MHz; T
= 10 V; f = 1 MHz; T
-1
Rev. 1 — 12 January 2012
j
j
= 25 °C
= 25 °C
j
j
= 25 °C
= 25 °C
1
p
p
j
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
= 25 °C
≤ 300 µs;
≤ 300 µs;
j
= 25 °C
10
PMEG2005EPK
Min
-
-
-
-
-
-
10
2
Typ
270
360
30
70
35
13
t
p
© NXP B.V. 2012. All rights reserved.
(s)
006aac942
Max
300
410
130
300
-
-
10
3
Unit
mV
mV
µA
µA
pF
pF
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