PMEG2005AELD NXP Semiconductors, PMEG2005AELD Datasheet - Page 7
PMEG2005AELD
Manufacturer Part Number
PMEG2005AELD
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
Manufacturer
NXP Semiconductors
Datasheet
1.PMEG2005AELD.pdf
(14 pages)
NXP Semiconductors
PMEG2005AELD
Product data sheet
Fig 7.
Fig 8.
P
F(AV)
(W)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
0.4
0.3
0.2
0.1
0.0
0.00
f = 1 MHz; T
T
Average forward power dissipation as a
function of average forward current; typical
values
Diode capacitance as a function of reverse voltage; typical values
j
= 150 °C
amb
(1)
0.25
= 25 °C
(2)
0.50
(pF)
(3)
C
d
30
20
10
0
I
F(AV)
0
All information provided in this document is subject to legal disclaimers.
006aac563
(A)
(4)
0.75
5
Rev. 1 — 10 May 2011
10
Fig 9.
20 V, 0.5 A low V
P
R(AV)
(W)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
1.5
1.0
0.5
0.0
15
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
j
V
006aac562
= 125 °C
R
(V)
2
20
PMEG2005AELD
F
MEGA Schottky barrier rectifier
4
6
(1)
(2)
(3)
© NXP B.V. 2011. All rights reserved.
8
006aac564
V
(4)
R
(V)
10
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