PMEG1030EH_EJ NXP Semiconductors, PMEG1030EH_EJ Datasheet - Page 4

• Manufacturer Part Number: PMEG1030EH_EJ
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with anintegrated guard ring for stress protection encapsulated in small SMD plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PMEG1030EH_EJ_4
Product data sheet
Fig 1.
(mA )
I
10
(1) T
(2) T
(3) T
(4) T
F
10
10
10
10
−1
4
3
2
1
0
Forward current as a function of forward
voltage; typical values
amb
amb
amb
amb
(1)
= 125 °C
= 85 °C
= 25 °C
= −40 °C
0.1
(2)
Table 8.
T
[1]
Symbol
V
I
C
0.2
R
amb
(3)
F
d
Pulse test: t
= 25
(4)
0.3
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
0.4
006aaa290
V
F
(V)
Rev. 04 — 15 January 2010
0.5
PMEG1030EH; PMEG1030EJ
Conditions
I
I
I
I
V
V
V
V
F
F
F
F
R
R
R
R
10 V, 3 A ultra low V
= 0.01 A
= 0.1 A
= 1 A
= 3 A
= 5 V
= 8 V
= 10 V
= 1 V; f = 1 MHz
Fig 2.
(μA)
I
(1) T
(2) T
(3) T
(4) T
R
10
10
10
10
10
10
1
6
5
4
3
2
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
= −40 °C
2
F
[1]
MEGA Schottky barrier rectifiers
(1)
(2)
(3)
(4)
-
Min
-
-
-
-
-
-
-
4
6
Typ
100
170
280
390
0.55
0.8
1
70
© NXP B.V. 2010. All rights reserved.
8
006aaa291
V
Max
130
200
350
530
2
2.5
3
85
R
(V)
10
Unit
mV
mV
mV
mV
mA
mA
mA
pF
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