RB521S30 NXP Semiconductors, RB521S30 Datasheet - Page 8

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra smalland flat lead Surface-Mounted Device (SMD) plastic package

RB521S30

Manufacturer Part Number
RB521S30
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra smalland flat lead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
9. Package outline
RB521S30_1
Product data sheet
8.1 Quality information
The current ratings for the typical waveforms as shown in
calculated according to the equations:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
I
RMS
Fig 12. Duty cycle definition
Fig 13. Package outline SOD523 (SC-79)
=
I
F AV
at DC, and
Dimensions in mm
Rev. 01 — 6 October 2009
1.65
1.55
1.25
1.15
I
RMS
P
=
I
M
t
0.85
0.75
0.34
0.26
1
200 mA low V
I
F AV
t
1
2
2
with I
duty cycle =
=
I
RMS
M
006aaa812
F
defined as RMS current.
MEGA Schottky barrier rectifier
t
t
t
1
2
with I
Figure
0.65
0.58
0.17
0.11
M
02-12-13
defined as peak current,
8,
9
RB521S30
and
© NXP B.V. 2009. All rights reserved.
10
are
8 of 12

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