BAT54CV NXP Semiconductors, BAT54CV Datasheet - Page 5

Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package

BAT54CV

Manufacturer Part Number
BAT54CV
Description
Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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8. Test information
9. Package outline
BAT54CV
Product data sheet
Fig 3.
T
Diode capacitance as a function of reverse voltage; typical values
amb
= 25 °C; f = 1 MHz
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 4.
Package outline BAT54CV (SOT666)
(pF)
C
15
d
10
0
5
0
All information provided in this document is subject to legal disclaimers.
1.7
1.5
Rev. 3 — 15 November 2010
Dimensions in mm
1.3
1.1
10
pin 1 index
6
1
0.5
20
1.7
1.5
1
5
2
V
R
(V)
msa891
3
4
30
Two Schottky barrier double diodes
0.27
0.17
0.3
0.1
0.6
0.5
0.18
0.08
04-11-08
BAT54CV
© NXP B.V. 2010. All rights reserved.
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