BYV42G-200 NXP Semiconductors, BYV42G-200 Datasheet - Page 5

• Manufacturer Part Number: BYV42G-200
• Description: Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BYV42G-200
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 4.
F
FR
r
(A)
I
F
50
40
30
20
10
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery voltage
0.5
(1)
(2)
1
(3)
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003aac344
V
F
Conditions
I
I
I
V
V
I
T
I
ramp recovery; T
I
measured at reverse current = 0.25 A;
T
I
see
(V)
F
F
F
F
F
F
F
j
j
R
R
= 15 A; T
= 15 A; T
= 30 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 25 °C
= 25 °C; see
= 200 V; T
= 200 V; T
Rev. 01 — 11 January 2011
1.5
Figure 7
R
R
F
R
j
j
j
/dt = 10 A/µs; T
= 30 V; dI
= 30 V; dI
= 150 °C; see
= 25 °C; see
= 25 °C; see
= 1 A; step recovery;
j
j
= 100 °C
= 25 °C
Figure 6
j
Fig 5.
= 25 °C; see
I
I
R
F
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
Figure 4
Figure 4
Reverse recovery definitions; ramp recovery
Figure 4
j
= 25 °C;
dl
dt
F
Figure 5
I
RM
Q
r
t
rr
Min
-
-
-
-
-
-
-
-
-
Dual ultrafast power diode
BYV42G-200
Typ
0.78
0.95
1
0.5
10
6
20
13
-
© NXP B.V. 2011. All rights reserved.
Max
0.85
1.05
1.2
1
100
15
28
22
1
25 %
003aac562
time
Unit
V
V
V
mA
µA
nC
ns
ns
V
100 %
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