BYV32G-200 NXP Semiconductors, BYV32G-200 Datasheet - Page 3

• Manufacturer Part Number: BYV32G-200
• Description: Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV32G-200
Product data sheet
Symbol
V
V
V
I
I
I
I
I
T
T
V
O(AV)
FRM
FSM
RRM
RSM
Fig 1.
stg
j
RRM
RWM
R
ESD
P
(W)
tot
12
8
4
0
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
4.0
4
2.8
2.2
1.9
a = 1.57
8
I
F(AV)
All information provided in this document is subject to legal disclaimers.
003aac978
(A)
Rev. 01 — 11 January 2011
12
Conditions
DC
square-wave pulse; δ = 0.5 ; T
both diodes conducting; see
see
δ = 0.5 ; t
t
per diode
t
per diode
δ = 0.001 ; t
t
HBM; C = 250 pF; R = 1.5 kΩ; all pins
p
p
p
= 8.3 ms; sine-wave pulse; T
= 10 ms; sine-wave pulse; T
= 100 µs
Figure 2
p
= 25 µs; T
Fig 2.
p
= 2 µs
P
(W)
tot
15
10
5
0
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
mb
≤ 115 °C; per diode
Figure
0.1
j(init)
mb
j(init)
≤ 115 °C;
5
= 25 °C;
= 25 °C;
0.2
1;
Dual ultrafast power diode
BYV32G-200
0.5
10
Min
-
-
-
-
-
-
-
-
-
-40
-
-
I
F(AV)
© NXP B.V. 2011. All rights reserved.
δ = 1
003aac979
(A)
200
200
150
Max
200
20
20
137
125
0.2
0.2
150
8
15
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
3 of 11