BYV32E-200 NXP Semiconductors, BYV32E-200 Datasheet - Page 4

• Manufacturer Part Number: BYV32E-200
• Description: Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BYV32E-200_4
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 3.
F
FR
th(j-mb)
th(j-a)
r
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery
voltage
Z
(K/W)
th(j-mb)
10
10
10
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
Conditions
I
I
V
V
I
T
I
ramp recovery; T
I
measured at reverse current = 0.25 A;
T
I
Figure 7
F
F
F
F
F
F
10
−1
−2
−3
j
j
R
R
1
10
= 20 A; T
= 8 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 25 °C
= 25 °C; see
= 200 V; T
= 200 V; T
−6
10
−5
j
R
R
F
Rev. 04 — 27 February 2009
= 150 °C; see
R
j
/dt = 10 A/µs; T
= 30 V; dI
= 30 V; dI
= 25 °C
= 1 A; step recovery;
10
j
j
= 100 °C
= 25 °C
Figure 6
−4
j
= 25 °C; see
10
−3
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
10
Figure 4
P
−2
j
= 25 °C; see
Dual rugged ultrafast rectifier diode, 20 A, 200 V
10
t
Figure 5
p
−1
T
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Min
-
-
-
-
-
-
-
-
BYV32E-200
Typ
-
-
60
Typ
1
0.72
0.2
6
8
20
10
-
© NXP B.V. 2009. All rights reserved.
Max
1.6
2.4
-
Max
1.15
0.85
0.6
30
12.5
25
20
1
Unit
K/W
K/W
K/W
Unit
V
V
mA
µA
nC
ns
ns
V
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