BYV32E-150 NXP Semiconductors, BYV32E-150 Datasheet - Page 4

• Manufacturer Part Number: BYV32E-150
• Description: Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BYV32E-150_4
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 3.
F
FR
th(j-mb)
th(j-a)
r
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery
voltage
Z
(K/W)
th(j-mb)
10
10
10
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
Conditions
I
I
V
V
I
T
I
ramp recovery; T
I
measured at reverse current = 0.25 A;
T
I
F
F
F
F
F
F
10
−1
−2
−3
j
j
R
R
1
10
= 8 A; T
= 20 A; T
= 2 A; V
= 1 A; V
= 1 A; I
= 1 A; dI
= 25 °C
= 25 °C; see
= 150 V; T
= 150 V; T
−6
10
R
−5
j
R
R
F
= 150 °C; see
= 0.5 A; step recovery;
j
/dt = 10 A/µs; see
= 30 V; dI
= 30 V; dI
= 25 °C
Rev. 04 — 2 March 2009
10
j
j
= 100 °C
= 25 °C
Figure 6
−4
j
= 25 °C; see
10
−3
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
10
Figure 4
P
−2
Dual rugged ultrafast rectifier diode, 20 A, 150 V
Figure 7
10
t
Figure 5
p
−1
T
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Min
-
-
-
-
-
-
-
-
BYV32E-150
Typ
-
-
60
Typ
0.72
1
0.2
6
8
20
10
-
© NXP B.V. 2009. All rights reserved.
Max
1.6
2.4
-
Max
0.85
1.15
0.6
30
12.5
25
20
1
Unit
K/W
K/W
K/W
Unit
V
V
mA
µA
nC
ns
ns
V
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