BYV29X-500 NXP Semiconductors, BYV29X-500 Datasheet - Page 3

• Manufacturer Part Number: BYV29X-500
• Description: Ultrafast power diode in a SOD113 (2-lead TO-220F) plstic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
T
February 1999
Rectifier diodes
ultrafast
SYMBOL PARAMETER
V
V
C
hs
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
V
I
Q
t
I
V
R
rr
rrm
= 25 ˚C unless otherwise stated
isol
isol
isol
F
fr
th j-hs
th j-a
s
= 25 ˚C unless otherwise specified
Peak isolation voltage from
all terminals to external
heatsink
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
heatsink
Capacitance from pin 2 to
external heatsink
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
SOD100 package; R.H. ≤ 65%; clean and
dustfree
sinusoidal waveform; R.H. ≤ 65%; clean
and dustfree
f = 1 MHz
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
CONDITIONS
I
I
I
V
V
I
dI
I
dI
I
dI
I
F
F
F
F
F
F
F
R
R
F
F
F
= 8 A; T
= 8 A
= 20 A
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
/dt = 20 A/µs
/dt = 100 A/µs
/dt = 50 A/µs; T
= V
= V
RRM
RRM
; T
j
2
= 150˚C
F
R
R
j
/dt = 10 A/µs
= 100 ˚C
R
≥ 30 V;
≥ 30 V;
≥ 30 V;
j
= 100˚C
BYV29F, BYV29X series
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
MIN.
-
-
-
TYP.
TYP.
0.90
1.05
1.20
2.0
0.1
4.0
2.5
Product specification
55
40
50
TYP. MAX. UNIT
-
-
10
-
-
MAX.
MAX.
1.03
1.25
1.40
0.35
5.5
7.2
5.5
1500
2500
50
60
60
-
-
-
Rev 1.400
UNIT
UNIT
K/W
K/W
K/W
mA
µA
nC
ns
pF
V
V
V
A
V
V
V