BYQ28X-200 NXP Semiconductors, BYQ28X-200 Datasheet - Page 5

• Manufacturer Part Number: BYQ28X-200
• Description: Dual ultrafast power diode in a SOT186A (TO-220F) isolated plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
BYQ28X-200_2
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
Fig 4.
F
FRM
r
(A)
I
F
15
10
5
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
peak forward recovery
voltage
0.5
(1)
1.0
Conditions
I
I
I
V
V
I
T
I
ramp recovery; T
I
measured at I
Figure 6
I
T
I
Figure 7
F
F
F
F
F
F
F
F
(2)
j
j
R
R
= 10 A; T
= 5 A; T
= 5 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 5 A; V
= 1 A; dI
= 25 °C
= 25 °C; see
= 200 V; T
= 200 V; T
V
F
001aag978
(3)
(V)
j
j
R
R
R
F
= 150 °C; see
= 25 °C
Rev. 02 — 5 February 2009
R
j
/dt = 10 A/µs; T
1.5
= 30 V; dI
= 30 V; dI
≥ 30 V; dI
= 25 °C
= 1 A; step recovery;
j
j
R
= 25 °C
= 100 °C
Figure 5
= 0.25 A; T
j
= 25 °C; see
F
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
/dt = 50 A/µs;
Figure 4
Fig 5.
I
I
j
R
j
F
= 25 °C; see
= 25 °C; see
Figure 5
Reverse recovery definitions; ramp recovery
dl
dt
F
I
RM
Dual ultrafast rugged rectifier diode
Q
r
Min
-
-
-
-
-
-
-
-
-
-
t
rr
BYQ28X-200
Typ
1.1
0.8
0.95
2
0.1
4
15
-
0.5
1
© NXP B.V. 2009. All rights reserved.
Max
1.25
0.895
1.1
10
0.2
9
25
20
0.7
-
25 %
003aac562
time
Unit
V
V
V
µA
mA
µC
ns
ns
A
V
100 %
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