BYC10B-600 NXP Semiconductors, BYC10B-600 Datasheet - Page 5

• Manufacturer Part Number: BYC10B-600
• Description: Hyperfast power diode in a SOT404 (D2PAK) surface-mountable plastic package
• Manufacturer: NXP Semiconductors

March 2001
Fig.9. Definition of reverse recovery parameters t
Rectifier diode
ultrafast, low switching loss
I
I
R
V F
F
Fig.10. Typical forward recovery voltage, V
Fig.11. Definition of forward recovery voltage V
I
20
15
10
F
Semiconductors
5
0
0
function of rate of change of current dI
Peak forward recovery voltage, Vfr (V)
Tj = 25 C
IF = 10 A
Rate of change of current, dIF/dt (A/ s)
I
rrm
50
dI
dt
Q
F
s
100
t
rr
150
V F
BYC10-600
10%
typ
F
time
time
/dt.
fr
time
as a
200
100%
V
rr
, I
fr
fr
rrm
4
Fig.13. Typical reverse leakage current as a function
Fig.12. Typical and maximum forward characteristic
100mA
Fig.14. Maximum thermal impedance Z
100uA
10mA
10uA
1mA
1uA
20
15
10
0.001
5
0
0.01
of reverse voltage. I
0.1
0
10
0
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
Reverse leakage current (A)
1
1us
Transient thermal impedance, Zth j-mb (K/W)
I
F
10us
100
= f(V
function of pulse width.
1
typ
100us
F
); T
Forward voltage, VF (V)
200
pulse width, tp (s)
j
= 25˚C and 150˚C.
1ms
Reverse voltage (V)
R
= f(V
2
P
300
D
max
10ms 100ms
R
t
Product specification
p
); parameter T
Tj = 125 C
T
400
BYC10B-600
100 C
75 C
50 C
25 C
3
D =
BYV79E
BYC10-600
t
T
p
1s
t
500
BYC10-600
th j-mb
Rev 1.400
10s
as a
j
4
600