CGD982HCI NXP Semiconductors, CGD982HCI Datasheet - Page 3

• Manufacturer Part Number: CGD982HCI
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Characteristics
Table 5.
Bandwidth 40 MHz to 1003 MHz; V
[1]
[2]
[3]
CGD982HCI
Product data sheet
Symbol Parameter
G
SL
FL
RL
RL
NF
I
tot
p
sl
in
out
G
Flatness is defined as peak deviation to straight line.
Direct Current (DC).
p
at 1003 MHz minus G
power gain
slope straight line
flatness of frequency response
input return loss
output return loss
noise figure
total current
Characteristics
p
at 40 MHz.
B
= 24 V (DC); Z
All information provided in this document is subject to legal disclaimers.
Conditions
f = 50 MHz
f = 870 MHz
f = 1003 MHz
f = 40 MHz to 1003 MHz
f = 40 MHz to 1003 MHz
f = 40 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 870 MHz
f = 870 MHz to 1003 MHz
f = 40 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 870 MHz
f = 870 MHz to 1003 MHz
f = 50 MHz
f = 1003 MHz
S
Rev. 1 — 3 March 2011
= Z
L
= 75
Ω
1 GHz, 22 dB gain GaAs high output power doubler
; T
mb
= 35
°
C; unless otherwise specified.
[1]
[2]
[3]
CGD982HCI
Min
-
-
22
0.5
-
20
20
19
17
16
20
20
19
18
17
-
-
-
Typ
21.5
22.5
23
-
-
-
-
-
-
-
-
-
-
-
-
4.6
5.5
440
© NXP B.V. 2011. All rights reserved.
Max Unit
-
-
24
2
1
-
-
-
-
-
-
-
-
-
-
5.6
6.5
460
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
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