BGD712C NXP Semiconductors, BGD712C Datasheet - Page 3

• Manufacturer Part Number: BGD712C
• Description: Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC)
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Characteristics
Table 5.
Bandwidth 40 MHz to 750 MHz; V
[1]
BGD712C
Product data sheet
Symbol
G
SL
FL
S
S
ϕ
CTB
CSO
NF
I
tot
s21
11
22
p
The module normally operates at V
Characteristics
Parameter
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
composite second-order
distortion
noise figure
total current
B
= 24 V; T
B
= 24 V, but is able to withstand supply transients up to 30 V.
All information provided in this document is subject to legal disclaimers.
mb
= 35
Rev. 3 — 29 September 2010
Conditions
f = 45 MHz
f = 750 MHz
f = 45 MHz to 750 MHz
f = 45 MHz to 100 MHz
f = 100 MHz to 700 MHz
f = 700 MHz to 750 MHz
f = 45 MHz to 790 MHz
f = 45 MHz to 790 MHz
f = 50 MHz
112 channels flat;
V
measured at 745.25 MHz
60 channels flat;
V
measured at 745.25 MHz
79 channels flat;
V
measured at 547.25 MHz
112 channels flat;
V
measured at 746.5 MHz
60 channels flat;
V
measured at 746.5 MHz
79 channels flat;
V
measured at 548.5 MHz
f = 50 MHz
f = 750 MHz
o
o
o
o
o
o
= 44 dBmV;
= 44 dBmV
= 44 dBmV
= 44 dBmV;
= 44 dBmV
= 44 dBmV
°
C; Z
S
= Z
L
= 75
750 MHz, 18.5 dB gain power doubler amplifier
Ω
.
[1]
Min
18.2
19.0
0.5
-
-
-
17
17
135
-
-
-
-
-
-
-
-
380
Typ
-
-
-
-
-
-
-
-
-
-
−67
-
-
−70
-
-
-
-
BGD712C
© NXP B.V. 2010. All rights reserved.
Max
18.8
20.0
1.5
±0.35
±0.5
±0.15
-
-
225
−62
-
−68
−63
-
−68
7
7
410
Unit
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
mA
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