N0118GA NXP Semiconductors, N0118GA Datasheet - Page 6

• Manufacturer Part Number: N0118GA
• Description: Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
N0118GA
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
GT
L
H
D
R
Fig 7.
T
GT
D
I
GT(25°C)
/dt
I
GT
2.5
2.0
1.5
1.0
0.5
0
-50
junction temperature
Normalized gate trigger current as a function of
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
0
50
100
All information provided in this document is subject to legal disclaimers.
003aag291
T
j
(°C)
Conditions
V
see
V
see
V
see
I
V
see
V
V
T
T
V
exponential waveform; see
see
T
j
j
D
D
D
D
D
D
DM
= 1.6 A; T
= 25 °C; R
= 125 °C; R
150
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 600 V; T
= 600 V; T
Figure 7
Figure 8
Figure 10
Figure 12
Figure 14
= 402 V; T
Rev. 1 — 11 July 2011
T
G
T
j
j
GK
= 25 °C; see
= 10 mA; T
= 0.1 A; T
= 25 °C; see
= 0.1 A; T
j
j
GK
= 25 °C; R
= 125 °C; R
j
= 1 kΩ; V
= 125 °C; R
Fig 8.
= 1 kΩ; V
I
L(25°C)
I
L
1.6
1.2
0.8
0.4
j
j
= 25 °C;
j
= 25 °C;
-50
GK
junction temperature
R
Normalized latching current as a function of
= 25 °C;
Figure 11
Figure
GK
R
= 600 V
Figure
GK
= 1 kΩ
600 V
= 1 kΩ
= 1 kΩ;
9;
13;
0
Min
0.5
-
-
-
-
-
-
-
-
75
50
Typ
-
-
-
1.4
-
-
-
-
-
-
100
N0118GA
© NXP B.V. 2011. All rights reserved.
003aag292
T
j
(°C)
Max
7
6
5
1.95
0.8
10
100
10
100
-
150
Unit
µA
mA
mA
V
V
µA
µA
µA
µA
V/µs
6 of 13
SCR