BT148W-600R NXP Semiconductors, BT148W-600R Datasheet - Page 2

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications

BT148W-600R

Manufacturer Part Number
BT148W-600R
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
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1;3 Semiconductors
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope
suitable
intended for use in general purpose
switching
applications. These devices are
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
PIN
DRM
t
GM
RGM
GM
G(AV)
stg
j
tab
T
1
2
3
/dt
, V
RRM
cathode
anode
gate
anode
for
and
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
surface
logic
phase
integrated
mounting,
control
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 200 mA/μs
= 4 A; I
,
G
= 200 mA;
1
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
1
sp
j
= 25 ˚C prior to
2
≤ 112 ˚C
4
3
BT148W-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-400R -500R -600R
400
a
MAX. MAX. MAX. UNIT
400R
400
0.6
10
1
1
Product specification
MAX.
BT148W series
500
0.12
125
150
0.6
0.5
1.2
10
11
50
500R
1
1
5
5
500
0.6
10
1
1
2
600
g
600R
600
0.6
10
1
1
Rev 1.300
UNIT
k
A/μs
A
W
W
˚C
˚C
V
A
A
A
A
A
V
V
2
V
A
A
A
s

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